BTD1816J3 Description
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1816J3 BVCEO IC Spec. 2005.03.29 Revised Date :2017.06.16 Page No.
BTD1816J3 Key Features
- Low collector-to-emitter saturation voltage
- High-speed switching
- Large current capability
- Good linearity of hFE
- High fT
- RoHS pliant package
BTD1816J3 Applications
- Suitable for relay drivers, high speed inverters, converters, and other high current switching applications