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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1816J3
BVCEO IC
Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2017.06.16 Page No. : 1/8
100V 4A
Features
• Low collector-to-emitter saturation voltage • High-speed switching • Large current capability • Good linearity of hFE • High fT • RoHS compliant package
Applications
• Suitable for relay drivers, high speed inverters, converters, and other high current switching applications.
BTD1816J3 Datasheet
