BTD1816J3
BTD1816J3 is Low Vcesat NPN Epitaxial Planar Transistor manufactured by Cystech Electonics.
Features
- Low collector-to-emitter saturation voltage
- High-speed switching
- Large current capability
- Good linearity of h FE
- High f T
- Ro HS pliant package
Applications
- Suitable for relay drivers, high speed inverters, converters, and other high current switching applications.
Symbol
Outline
TO-252(DPAK)
B：Base C：Collector E：Emitter
B CE
Ordering Information
Device BTD1816J3-X-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T3:2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2017.06.16 Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25°C Power Dissipation @ TC=25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PD PD RθJA
RθJC Tj Tstg
Limits
120 100
6 4 8 (Note 1) 1.2 1 20 125
6.25 150 -55~+150
Unit V V...
