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BTD1805D3 - NPN Epitaxial Planar Transistor

General Description

The device is manufactured in NPN planar technology by using a “Base Island” layout.

The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Key Features

  • Very low collector-to-emitter saturation voltage.
  • Fast switching speed.
  • High current gain characteristic.
  • Large current capability.
  • Pb-free package.

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Datasheet Details

Part number BTD1805D3
Manufacturer Cystech Electonics
File Size 177.55 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD1805D3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C820D3 Issued Date : 2005.03.29 Revised Date :2006.04.21 Page No. : 1/ 4 BTD1805D3 Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features • Very low collector-to-emitter saturation voltage • Fast switching speed • High current gain characteristic • Large current capability • Pb-free package Applications • CCFL drivers • Voltage regulators • Relay drivers • High efficiency low voltage switching applications Symbol BTD1805D3 Outline TO-126ML B:Base C:Collector E:Emitter E C B BTD1805D3 CYStek Product Specification CYStech Electronics Corp.