BTD1805D3 Datasheet | Cystech Electonics

Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features - Very low collector-to-emitter saturation voltage - Fast switching speed - High current gain characteristic - Large current capability - Pb-free package Applications - CCFL drivers - Voltage regulators - Relay drivers - High efficiency low voltage switching applications Symbol Outline TO-126ML B：Base C：Collector E：Emitter CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Spec. No. : C820D3 Issued Date : 2005.03.29 Revised Date :2006.04.21 Page No. : 2/ 4 Limits 150 60 7 5 10 (Note 1) 2 1 20 125 8.33 150 -55~+150 Unit V V V A A W °C/W °C/W °C °C Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. Characteristics (Ta=25°C) Symbol BVCBO - BVCEO BVEBO ICBO IEBO - VCE(sat) 1 - VCE(sat) 2 - VCE(sat) 3 - VCE(sat) 4 - VBE(sat) - h FE 1 - h FE 2 - h FE 3 f T Cob ton tstg tf Min. 150 60 7 200 85 20 Typ. 200 240 0.9 150 50 50 1.35 120 Max. 0.1 0.1 50 300 400 600 1.2 400 Unit V V V µA µA m V m V m V m V V MHz p F ns µs ns Test Conditions IC=100µA, IE=0 IC=1m A, IB=0 IC=100µA, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 IC=100m A, IB=5m A IC=2A, IB=50m A IC=3A, IB=150m A IC=5A, IB=200m A IC=2A, IB=100m A VCE=2V, IC=100m A VCE=2V, IC=5A VCE=2V, IC=10A VCE=10V, IC=50m A VCB=10V, f=1MHz VCC=30V, IC=10IB1=-10IB2=1A, RL=30Ω - Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% CYStek Product Specification CYStech Electronics Corp. Characteristic...