BTD1805I3 Datasheet | Cystech Electonics

Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features - Very low collector-to-emitter saturation voltage - Fast switching speed - High current gain characteristic - Large current capability - Ro HS pliant package Applications - CCFL drivers - Voltage regulators - Relay drivers - High efficiency low voltage switching applications Symbol Outline TO-251AB TO-251S B：Base C：Collector E：Emitter B CE CYStek Product Specification CYStech Electronics Corp. Spec. No. : C820I3 Issued Date : 2004.12.19 Revised Date :2012.09.19 Page No. : 2/ 8 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB RθJA RθJC Tj Tstg Limits 120 60 7 5 10 (Note 1) 2 125 8.33 150 -55~+150 Unit V A W °C/W...