Datasheet Details
| Part number | BTD1805J3 |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 297.73 KB |
| Description | Low Vcesat NPN Epitaxial Planar Transistor |
| Datasheet |
 BTD1805J3 Datasheet
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General Description
The device is manufactured in NPN planar technology by using a “Base Island” layout.
The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Key Features
- Very low collector-to-emitter saturation voltage.
- Fast switching speed.
- High current gain characteristic.
- Large current capability.
- RoHS compliant package.