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BTD1805J3 Datasheet Low Vcesat NPN Epitaxial Planar Transistor

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805J3 BVCEO IC RCESAT Spec. No. : C820J3 Issued Date : 2004.12.19 Revised Date :2010.12.08 Page No.

Datasheet Details

Part number BTD1805J3
Manufacturer Cystech Electonics
File Size 297.73 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet BTD1805J3_CystechElectonics.pdf

General Description

The device is manufactured in NPN planar technology by using a “Base Island” layout.

The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Key Features

  • Very low collector-to-emitter saturation voltage.
  • Fast switching speed.
  • High current gain characteristic.
  • Large current capability.
  • RoHS compliant package.

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