D1980 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1980 DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor betwe

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a FEATURES AC ’97 2.3 COMPATIBLE FEATURES 6 DAC Channels for 5.1 Surround S/PDIF Output Integrated Stereo Headphone Amplifier Variable Rate Audio Doub

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a FEATURES AC ’97 2.3 COMPATIBLE FEATURES 6 DAC Channels for 5.1 Surround S/PDIF Output Integrated Stereo Headphone Amplifier Variable Rate Audio Doub

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Power Transistor (100V, 2A) 2SD1980 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Bu

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isc Silicon NPN Power Transistor DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in da

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Power Transistor (100V, 2A) 2SD1980 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Bu

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CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD1980J3 BVCEO IC RCESAT Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date :2209.

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