Equivalent circuit C Built-in Avalanche Diode fo.
INCHANGE
2SD2141 - NPN Transistor
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2141 DESCRIPTION ·High DC Current Gain- : hFE = 1500(Min)@ IC= 3A ·Low Collect.
Sanken electric
2SD2141 - Silicon NPN Transistor
Built-in Avalanche Diode for Surge Absorbing Darlington Equivalent circuit C 2SD2141 B (1.5kΩ)(100Ω) E Silicon NPN Triple Diffused Planar Transistor.
Allegro Micro Systems
D2141 - 2SD2141
Equivalent circuit C Built-in Avalanche Diode for Surge Absorbing Darlington 2SD2141 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(.
Samsung semiconductor
S1D2141X01-D0 - R/G/B VIDEO AMPLIFIER FOR MONITORS
R/G/B VIDEO AMPLIFIER FOR MONITORS S1D2141X01 R/G/B VIDEO AMPLIFIER The S1D2141X01 is a very high frequency Video amplifier system to be used in Mon.
Samsung semiconductor
S1D2141X01-D0B0 - R/G/B VIDEO AMPLIFIER FOR MONITORS
R/G/B VIDEO AMPLIFIER FOR MONITORS S1D2141X01 R/G/B VIDEO AMPLIFIER The S1D2141X01 is a very high frequency Video amplifier system to be used in Mon.
Samsung semiconductor
S1D2141X01 - R/G/B VIDEO AMPLIFIER FOR MONITORS
R/G/B VIDEO AMPLIFIER FOR MONITORS S1D2141X01 R/G/B VIDEO AMPLIFIER The S1D2141X01 is a very high frequency Video amplifier system to be used in Mon.