2SD2141
Sanken ↗ electric
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Silicon npn transistor.
Built-in Avalanche Diode for Surge Absorbing Darlington
Equivalent circuit C
2SD2141 B (1.5kΩ)(100Ω) E
Silicon NPN Triple Diffused Planar Transistor.
📁 Related Datasheet
2SD214 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD214
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: V.
2SD2140 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·Wide Area of Safe Operation ·Complement to .
2SD2141 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD2141
DESCRIPTION ·High DC Current Gain-
: hFE = 1500(Min)@ IC= 3A ·Low Collect.
2SD2142 - Silicon NPN Transistor
(GME)
Silicon Epitaxial Planar Transistor
FEATURES
Darlington connection for a high Hfe High input impedance
Pb
APPLICATIONS
General purpose amplif.
2SD2142 - NPN Transistor
(SeCoS Halbleitertechnologie GmbH)
..
2SD2142
NPN Plastic Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of -C specifies halogen & lead-free
Elektro.
2SD2142 - NPN Transistor
(JinYu)
2SD2142
TRANSISOR (NPN)
SOT–23
FEATURES Darlington Connection for a High hFE High Input Impedance MARKING: R1M
MAXIMUM RATINGS (Ta=25℃ unless .
2SD2142 - NPN Transistors
(Kexin)
SMD Type
NPN Transistors 2SD2142
■ Features
● Collector Current Capability IC=300mA ● Collector Emitter Voltage VCEO=32V
+0.22.8 -0.1
Transistors
.
2SD2142K - High-gain Amplifier Transistor
(Rohm)
2SD2142K
High-gain Amplifier Transistor (30V, 300mA)
Parameter
VCES
Value
30V
lOutline
SMT3
IC 300mA
lFeatures 1)Darlington connection for a hi.
