2SD2558Darlington Equivalent circuit B C (70â„.
Sanken electric
2SD2558 - Silicon NPN Transistor
Equivalent circuit C Darlington 2SD2558 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=10m.
Sanken electric
D2558 - 2SD2558
2SD2558Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator and General Purpose.
INCHANGE
2SD2558 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High DC Current Gain- : hFE= 150.
Toshiba Semiconductor
TCD2558D - CCD Linear Image Sensor
TCD2558D Preliminary TOSHIBA CCD Linear Image Sensor CCD (charge coupled device) TCD2558D www.datasheet4u.com The TCD2558D is a high sensitive and.