D2558 Datasheet | Specifications & PDF Download

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High DC Current Gain- : hFE= 150

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TCD2558D Preliminary TOSHIBA CCD Linear Image Sensor CCD (charge coupled device) TCD2558D www.datasheet4u.com The TCD2558D is a high sensitive and

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2SD2558Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator and General Purpose

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Equivalent circuit C Darlington 2SD2558 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=10m

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