2SD2558 Datasheet - Sanken electric

2SD2558 Silicon NPN Transistor

Equivalent circuit C Darlington 2SD2558 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=5V, IC=1A IC=1A, IB=5mA VCE=10V, IE= 0.5A VCB=10V, f=1MHz 2SD2558 100max 5max 200min 1500 to 6500 1.5max 15typ 110typ V MHz 16.2 B (7 0 Ω ) E Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2558 200 200 6 5 2 60(Tc=25°C) 150 55 to +150 Unit V V V .

2SD2558 Datasheet (20.50 KB)