2SD2561
Sanken ↗ electric
24.28 KB
Silicon npn transistor.
Equivalent circuit
C
Darlington
2SD2561
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=.
📁 Related Datasheet
2SD256 - Silicon NPN Power Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD256
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 40V(Min) ·Collector Po.
2SD2560 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·High DC Current Gain-
: hFE= 5000.
2SD2560 - Silicon NPN Transistor
(Sanken electric)
2SD2560 Darlington
Equivalent circuit C B
(70Ω) E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647)
Application : Audio, S.
2SD2560 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
2SD2560
..
DESCRIPTION ·With TO-3PN packag.
2SD2561 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·High DC Current Gain-
: hFE= 500.
2SD2562 - Silicon NPN Darlington Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·High DC Current Gain-
: hFE= 5000.
2SD2562 - Silicon NPN Transistor
(Sanken)
2SD2562 Darlington
Equivalent circuit C B
(70Ω) E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649)
Application : Audio, S.
2SD2565 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD2565
Silicon NPN triple diffusion planer type
For high voltage-withstand switching
Unit: mm
6.9±0.1
0.15
1.05 2.5±0.1 ±0.05
(1.45) 0..
