2SD2561 Datasheet - Sanken electric

2SD2561 Silicon NPN Transistor

Equivalent circuit C Darlington 2SD2561 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE= 2A VCB=10V, f=1MHz 2SD2561 100max 100max 150min 5000min∗ 2.5max 3.0max 70typ 120typ V V MHz pF 20.0min 4.0max 2 3 B (7 0 Ω ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB P.

2SD2561_Sankenelectric.pdf