INCHANGE Semiconductor isc Silicon NPN Darlington .
D2562 - 2SD2562
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2562 DESCRIPTION ·Collector-Emitter Breakdown Voltag.2SD2562 - Silicon NPN Transistor
2SD2562 Darlington Equivalent circuit C B (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) Application : Audio, S.2SD2562 - Silicon NPN Darlington Power Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000.