2SD2562 Datasheet, transistor equivalent, Sanken

PDF File Details

Part number: 2SD2562

Manufacturer: Sanken (https://www.sanken-ele.co.jp/)

File Size: 29.17KB

Download: 📄 Datasheet

Description: Silicon NPN Transistor

Datasheet Preview: 2SD2562 📥 Download PDF (29.17KB)

2SD2562 Description

.

TAGS

2SD2562
Silicon
NPN
Transistor
Sanken

📁 Related Datasheet

2SD256 - Silicon NPN Power Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD256 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) ·Collector Po.

2SD2560 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000.

2SD2560 - Silicon NPN Transistor (Sanken electric)
2SD2560 Darlington Equivalent circuit C B (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) Application : Audio, S.

2SD2560 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2560 www.datasheet4u.com DESCRIPTION ·With TO-3PN packag.

2SD2561 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 500.

2SD2561 - Silicon NPN Transistor (Sanken electric)
Equivalent circuit C Darlington 2SD2561 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=.

2SD2562 - Silicon NPN Darlington Power Transistor (Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000.

2SD2565 - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD2565 Silicon NPN triple diffusion planer type For high voltage-withstand switching Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0..

2SD2568 - Power Transistor (Rohm)
2SD2568 Transistors Power Transistor (400V, 0.5A) 2SD2568 zFeatures 1) High breakdown voltage.(BVCEO=400V) zAbsolute maximum ratings (Ta=25°C) Param.

2SD2500 - Silicon NPN Transistor (Toshiba Semiconductor)
2SD2500 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2500 HORIZONTAL DEFLECTION OUTPUT COLOR TV Unit: mm l High Voltage : VCBO = 15.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts