D363 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD363 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CE

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isc Silicon NPN Power Transistor INCHANGE Semiconductor KSD363 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector Po

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector Power Dissipation- : PC= 40W(Max)

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OBSOLETE OBSOLETE OBSOLETE OBSOLETE OBSOLETE OBSOLETE OBSOLETE OBSOLETE OBSOLETE OBSOLETE OBSOLETE OBSOLETE OBSOLETE OBSOLETE OBSOLETE

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KSD363 KSD363 B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=300V • Collector Current : IC=6A • Collector Dissipation : PC=40W(T

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Mica Capacitors, Standard Dipped Types CD10, D10, CD15, CD19, CD30, CD42, CDV19, CDV30 Stability and mica go hand-in-hand when you need to count on st

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