D3N40 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor AOD3N40 FEATURES ·Drain Current –ID= 2.6A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Re

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AOD3N40 400V,2.6A N-Channel MOSFET General Description Product Summary The AOD3N40 has been fabricated using an advanced high voltage MOSFET proces

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AOD3N40 400V,2.6A N-Channel MOSFET General Description Product Summary The AOD3N40 has been fabricated using an advanced high voltage MOSFET proces

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FDD3N40 / FDU3N40 — N-Channel UniFETTM MOSFET FDD3N40 / FDU3N40 N-Channel UniFETTM MOSFET 400 V, 2 A, 3.4 Ω Features • RDS(on) = 3.4 Ω (Typ.) @ VGS =

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AOD3N40 400V,2.6A N-Channel MOSFET General Description The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed

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MDD3N40 N-Channel MOSFET 400V MDD3N40 N-Channel MOSFET 400V, 2.0A, 3.4Ω General Description The MDD3N40 use advanced Magnachip’s MOSFET Technology,

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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STD3N40K3 Features N-channel 400 V, 2.7 Ω typ., 2 A SuperMESH3™ Zener-protected Power MOSFET in a DPAK package Datasheet — production data Order co

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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