AOD3N40 - N-Channel MOSFET
The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC- DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly in
AOD3N40 Features
* VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 500V@150℃ 2.6A < 3.1Ω TO252 DPAK D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C
