AOD2908 - N-Channel MOSFET

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Datasheet Details

The AOD2908 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100V 52A < 13.5mΩ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C C TA=25° TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambi.

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Published: Dec 2, 2013 |