AOD210 - N-Channel MOSFET

Freescale

Datasheet Details

The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 70A < 3mΩ < 4mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Maximum 30 ±20 70 55 390 23 18 68 231 150 75 2.7 1.7 -55 to 175 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W °C Avalanche ene.

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Published: Dec 2, 2013 |