AOD200
Freescale
320.17kb
N-channel mosfet. The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performanc
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AOD200 - N-Channel MOSFET
(Alpha & Omega Semiconductors)
AOD200
30V N-Channel MOSFET
General Description
The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient hig.
AOD200 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
AOD200
FEATURES ·Drain Current –ID=36A@ TC=25℃ ·Drain Source Voltage-
: VDSS=30V(Min) ·Static Drain-Source On-Resist.
AOD206 - 30V N-Channel MOSFET
(Alpha & Omega Semiconductors)
AOD206/AOI206
30V N-Channel AlphaMOS
General Description
• Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • Hig.
AOD208 - N-Channel MOSFET
(Alpha & Omega Semiconductors)
AOD208
30V N-Channel MOSFET
General Description
The AOD208 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient hig.
AOD208 - N-Channel MOSFET
(Freescale)
AOD208
30V N-Channel MOSFET
General Description
The AOD208 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high.
AOD208 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
AOD208
FEATURES ·Drain Current –ID=54A@ TC=25℃ ·Drain Source Voltage-
: VDSS=30V(Min) ·Static Drain-Source On-Resist.
AOD210 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
AOD210
FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 30V(Min) ·Static Drain-Source On-Resi.
AOD210 - N-Channel MOSFET
(Alpha & Omega Semiconductors)
AOD210
30V N-Channel MOSFET
General Description
The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient hig.
AOD210 - N-Channel MOSFET
(Freescale)
AOD210
30V N-Channel MOSFET
General Description
The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high.
AOD210V60E - 600V N-Channel Power Transistor
(Alpha & Omega Semiconductors)
AOD210V60E
600V, a MOSE TM N-Channel Power Transistor
General Description
• Excellent RDS(ON)*A • Optimized switching parameters for better EMI
perfo.