Datasheet4U Logo Datasheet4U.com

PHD3N40E N-Channel MOSFET

PHD3N40E Description

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.

PHD3N40E Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance PHP3N40E, PHB3N40E, PHD3N40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V g ID = 2.5 A RDS(ON) ≤ 3.5 Ω s GENERAL DES

📥 Download Datasheet

Preview of PHD3N40E PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • PHD13003C - NPN power transistor (WeEn)
  • PHD16N03LT - N-channel TrenchMOS logic level FET (NXP Semiconductors)
  • PHD16N03T - TrenchMOS standard level FET (NXP Semiconductors)
  • PHD20N06T - N-channel TrenchMOS standard level FET (nexperia)
  • PHD22NQ20T - N-channel TrenchMOS standard level FET (NXP Semiconductors)
  • PHD44N06LT - N-Channel MOSFET (INCHANGE)
  • PHD50N06LT - N-Channel MOSFET (INCHANGE)
  • PHD55N03 - N-Channel MOSFET (INCHANGE)

📌 All Tags

NXP PHD3N40E-like datasheet