PHD3N20E PowerMOS transistor

NXP

Description

Philips Semiconductors Product specification PowerMOS transistor PHD3N20E GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capabilit.

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Datasheet Specifications

Part number: PHD3N20E
Manufacturer: NXP ↗
File Size: 56.82 KB
Datasheet: PHD3N20E_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

PHD3N20E Distributors

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PHD3N20E PowerMOS transistor NXP

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