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PHD3N20E

PowerMOS transistor

PHD3N20E General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power S.

PHD3N20E Datasheet (56.82 KB)

Preview of PHD3N20E PDF

Datasheet Details

Part number:

PHD3N20E

Manufacturer:

NXP ↗

File Size:

56.82 KB

Description:

Powermos transistor.

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PHD3N20E PowerMOS transistor NXP

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