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PHD3N20E Datasheet - NXP

PHD3N20E PowerMOS transistor

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power S.

PHD3N20E_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

PHD3N20E

Manufacturer:

NXP ↗

File Size:

56.82 KB

Description:

Powermos transistor.

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PHD3N20E PHD3N20E PowerMOS transistor NXP

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