D45VH-NewJerseySemi Datasheet | Specifications & PDF Download

AOD452 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD452 uses advanced trench technology and design to pro

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FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5

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D4558 FEATURES ● ● ● ● ● ● ● No frequency Compensation Required No latch-up Large common mode and differential voltage range Parameter tracking over t

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Sumc Single-supply Dual High Current Operational Amplifier D 4556 DESCRIPTION The D 4556 integrated circuit is a high gain, high output current, high

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AOD458 250V,14A N-Channel MOSFET General Description Product Summary The AOD458 has been fabricated using an advanced high voltage MOSFET process t

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D452A-VB D452A-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.005 at VGS = 10 V 0.006 at VGS =

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A lllCR~ UlllVEllSAL CO., LTD. ACTIVE DELAY LINES AD14SLD SERIES: 14-PIN 10-TAP SURFACE MOUNTING, L LEAD FEATURES: •Compatible with TTL Circuits • 1

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FD450R12KE4P 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und bereits aufgetragenem Thermal Interface Material 62mm

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A200 D90 A100 D90 A100 D45 14 12 No. T50 T040 075 220 T50 T040W 075W 220W M.S S100 S100W 100 400 100W 400W M.S A200 D90 A100 D45 14 12 6 A100 D90

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WNC3060D45160W Hyperfast power diode with Standard recovery diode Rev.02 - 09 January 2024 Product data sheet 1. General description Hyperfast pow

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A UNIVERSAL llllCROELEC'l'RlilCS CO., LTD. ACTIVE DELAY LINES AD14CD SERIES: 14-PIN DIP 10-TAP AUTO INSERTABLE FEATURES: •Compatible with TTL Circui

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& UNIVERW. llllCROELECTRONICS CO., LTD. ACTIVE DELAY LINES AD1480 SERIES: 14-PIN DIL 10-TAP EQUALLY-SPACED FEATURES: •Compatible with TTL Circuits e

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D454A-VB D454A-VB Datasheet N-Channel 4 0-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.012 at VGS = 10 V 0.014 at VGS =

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R D 2004.01 1/5 2004.01 2/5 (mA) Ic (A) 10 500mA 450mA 400mA 350mA 300mA 250mA 200mA 5 150mA 100mA 50mA 2 01 - 34 VCE (V) 5 2004.01 3/

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www.DataSheet4U.com AOD452 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD452 uses advanced trench technology and desi

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CD914, CD3600, CD4148, CD4150, CD4153, CD4454, CD4531, CD6640, CD6642 Silicon Switching Diode Chips Features Die • All Junctions Completely Protect

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DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45

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FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5

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UNISONIC TECHNOLOGIES CO., LTD CD4541 PROGRAMMABLE TIMER  DESCRIPTION The CD4541 programmable timer comprise a 16-stage binary counter, an integrate

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