D4N Datasheet | Specifications & PDF Download

SVD4N60D/F(G)/T_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N60D/F(G)/T is an N-channel enhancement mode power MOS field effect transi

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SVD4N60D/F(G)/T_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N60D/F(G)/T is an N-channel enhancement mode power MOS field effect transi

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SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is

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MDD4N20Y N-channel MOSFET 200V MDD4N20Y N-Channel MOSFET 200V, 3.0A, 1.35Ω General Description The MDD4N20Y uses advanced Magnachip’s MOSFET Technol

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NTMD4N03, NVMD4N03 MOSFET – Power, Dual, N-Channel, SO-8 4 A, 30 V Features • Designed for use in low voltage, high speed switching applications • U

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FQD4N50 / FQU4N50 N-Channel MOSFET FQD4N50 / FQU4N50 N-Channel QFET® MOSFET 500 V, 2.6 A, 2.7 Ω Description This N-Channel enhancement mode power MOS

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FQD4N60/FQI4N60/FQU4N60 600V,4A N-Channel MOSFET General Description Product Summary The FQD4N60 & FQI4N60 & FQU4N60 have been fabricated using an

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NTMD4N03R2 Power MOSFET 4 Amps, 30 Volts N−Channel SO−8 Dual Features www.DataSheet4U.com • Designed for use in low voltage, high speed switching ap

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isc N-Channel MOSFET Transistor AOD4N60 FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi

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MOSFET – Power, Single N-Channel 60 V, 1.49 mW, 198 A NVMJST1D4N06CL Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize

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MOSFET - Power, Single N-Channel, STD Gate, m8FL 40 V, 1.43 mW, 178 A NTTFS1D4N04XM Features • Low RDS(on) to Minimize Conduction Losses • Low Capaci

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STB4NK60Z-1, STB4NK60ZT4 STD4NK60Z-1, STD4NK60ZT4 Datasheet N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK p

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FQD4N20L / FQU4N20L December 2000 QFET FQD4N20L / FQU4N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power fi

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BRD4N60 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 N MOS 。N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,。 Low gate charge,

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NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featur

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MDD4N25 N-channel MOSFET 250V MDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω General Description The MDD4N25 uses advanced Magnachip’s MOSFET Technology

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www.DataSheet4U.com EMD4 / UMD4N Transistors General purpose (dual digital transistors) EMD4 / UMD4N zFeatures 1) Both the DTA114Y chip and DTC144E

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N-CHANNEL 200V - 1.2Ω - 4A DPAK/IPAK MESH OVERLAY™ MOSFET TYPE STD4N20 www.DataSheet4U.com s TYPICAL s s s STD4N20 VDSS 200 V RDS(on) < 1.5 Ω ID 4

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NTMD4N03, NVMD4N03 MOSFET – Power, Dual, N-Channel, SO-8 4 A, 30 V Features • Designed for use in low voltage, high speed switching applications • U

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