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MTE2D4N06F7T N-Channel Enhancement Mode Power MOSFET

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Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTE2D4N06F7T Spec.No.: C933F7T Issued Date : 2016.12.30 Revised Date : 2017.01.03.

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Datasheet Specifications

Part number
MTE2D4N06F7T
Manufacturer
Cystech Electonics
File Size
451.04 KB
Datasheet
MTE2D4N06F7T-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* Simple Drive Requirement
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A 60V 172A 2.0mΩ Symbol MTE2D4N06F7T Outline TO-263-7L-4C G:Gate D:Drain S:Source Ordering Information Device Package Shipping

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