* Simple Drive Requirement
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A 60V 172A 2.0mΩ Symbol MTE2D4N06F7T Outline TO-263-7L-4C G：Gate D：Drain S：Source Ordering Information Device Package Shipping
MTE2D4N06F7T Datasheet (451.04 KB)
MTE2D4N06F7T
Cystech Electonics
451.04 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE2D4N06F7T
Spec. No. : C933F7T Issued Date : 2016.12.30 Revised Date : 2017.01.03.
📁 Related Datasheet
MTE2D4N06F3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE2D4N06FP N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE2D4N06E3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE2D0N04E3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE2D0N04F3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE2D0N04F7T N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE2D0N04H8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE2010 INFRARED LED (Marktech Corporate)
MTE2045-OH1T Infrared Emitter (Marktech Corporate)
MTE2050 INFRARED LED (Marktech Corporate)
