MTE2D0N04E3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

MTE2D0N04E3 Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTE2D0N04E3 Spec.No.: C072E3 Issued Date : 2016.03.04 Revised Date : Page No.: 1.

MTE2D0N04E3 Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A 40V 84A 17.3A 2.0 mΩ(typ) Symbol MTE2D0N04E3 Outline TO-220 G：G

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Datasheet Details

Part number: MTE2D0N04E3
Manufacturer: Cystech Electonics
File Size: 415.32 KB
Datasheet: MTE2D0N04E3-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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