* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A 40V 84A 17.3A 2.0 mΩ(typ) Symbol MTE2D0N04E3 Outline TO-220 G：G
MTE2D0N04E3 Datasheet (415.32 KB)
MTE2D0N04E3
Cystech Electonics
415.32 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE2D0N04E3
Spec. No. : C072E3 Issued Date : 2016.03.04 Revised Date : Page No. : 1.
📁 Related Datasheet
MTE2D0N04F3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE2D0N04F7T N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE2D0N04H8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE2D4N06E3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE2D4N06F3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE2D4N06F7T N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE2D4N06FP N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE2010 INFRARED LED (Marktech Corporate)
MTE2045-OH1T Infrared Emitter (Marktech Corporate)
MTE2050 INFRARED LED (Marktech Corporate)
