* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A 40V 84A 17.3A 2.1 mΩ(typ) Symbol MTE2D0N04F3 Outline TO-263 G：
MTE2D0N04F3 Datasheet (433.88 KB)
MTE2D0N04F3
Cystech Electonics
433.88 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C072F3 Issued Date : 2016.03.04 Revised Date : Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE2D0N.
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