* RDS(ON)@VGS=10V, ID=20A
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package 40V 145A(silicon limit) 84A(package limit) 23A 1.65mΩ(typ) Symbol MTE2D0N04H8 Outline
MTE2D0N04H8 Datasheet (481.06 KB)
MTE2D0N04H8
Cystech Electonics
481.06 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C072H8 Issued Date : 2016.03.02 Revised Date : 2016.03.04 Page No. : 1/ 10
N-Channel Enhancement Mode Power MO.
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