MTE2D0N04H8 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C072H8 Issued Date : 2016.03.02 Revised Date : 2016.03.04 Page No.: 1/ 10 N-Channel Enhancement Mode Power MO.

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Datasheet Specifications

Part number: MTE2D0N04H8
Manufacturer: Cystech Electonics
File Size: 481.06 KB
Datasheet: MTE2D0N04H8-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* RDS(ON)@VGS=10V, ID=20A
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package 40V 145A(silicon limit) 84A(package limit) 23A 1.65mΩ(typ) Symbol MTE2D0N04H8 Outline

MTE2D0N04H8 Distributors

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MTE2D0N04H8 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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