D880-Y Datasheet | Specifications & PDF Download

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD880 DESCRIPTION www.dat·aWshiethet4Tu.Oco-m220C package ·Complement to

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SILICON PLASTIC POWER TRANSISTOR NPN 2SD880Y 3A 30W Technical Data …designed for Low Frequency Power Amplifier. F Collector-Emitter Voltage: VCEO=60V

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MCC TM Micro Commercial Components
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UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SD880 is designed for audio frequency

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2SD880 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 BASE 1 1 2 FEATURES: * Low frequency power amplifier * Complement to 2SB8

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Dual Optically-Coupled Isolator Optoelectronic Products 5-21 FCD880,FCD885 General Description The FCD880 and FCD885 comprise two distinct optoisola

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SILICON NPN TRIPLE DIFFUSED TYPE 2SD880 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES : . High DC Current Gain : hEE =300(Max. )(VCE =5V, I

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a FEATURES Low Cost Replaces Eight Potentiometers Eight Individually Programmable Outputs Three-Wire Serial Input Power Shutdown ≤ 25 ␮W Including IDD

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NPN Epitaxial Silicon Transistor FEATURES  Low frequency power amplifier.  Complememt to 2SB834. Pb Lead-free Production specification 2SD880 TO

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD880 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Compleme

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TIGER ELECTRONIC CO.,LTD 2SD880 / 2SB834 DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (

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isc Silicon NPN Power Transistor 2SD880 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Vol

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Dual Channel OptoHiTt Series, High-Temperature Phototransistor Optocoupler in Small Outline 8-Pin Package FOD8802 Series Description The FOD8802 dual

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BD840T~BD8200T THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classificati

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MCC Micro Commercial Components TM
     omponents 20736 Marilla Street Chatsworth  # $ % #

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isc Silicon NPN Power Transistor KSD880 DESCRIPTION ·Collector-Emitter sustaining Voltage : VCEO=60V(Min) ·Good Linearity of hFE ·Complement to KSB8

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® WON-TOP ELECTRONICS MBRD820/S – MBRD8100/S 8.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring Die Cons

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UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SD880 is designed for audio frequency

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