D896 Datasheet | Specifications & PDF Download

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80V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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Ordering number:ENN678F 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7

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Datasheet 2.7V to 5.5V, 3A 1ch Synchronous Buck Converter with Integrated FET BD8963EFJ General Description The BD8963EFJ is ROHM's high efficiency

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BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for

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Datasheet 4.0V to 5.5V, 0.8A 1ch Synchronous Buck Converter with Integrated FET BD8966FVM General Description The BD8966FVM is ROHM’s high efficienc

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CXD8969AR (1/2) IL08D C-MOS SDDI INTERFACE (GATE ARRAY) —TOP VIEW— 75 70 65 60 55 51 GND VDD( NC NC NC 76 VDD GND 80 NC NC 85 GND NC 50 NC NC NC

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Ordering number:ENN678F 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7

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Single-chip Type with Built-in FET Switching Regulators Low Noise High Efficiency Step-down Switching Regulator with Built-in Power MOSFET BD8960NV N

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Datasheet 4.5V to 5.5V, 2.0A 1ch Synchronous Buck Converter with Integrated FET BD8961NV General Description The BD8961NV is ROHM's high efficiency

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SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit a

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isc Silicon PNP Darlington Power Transistor BD896A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : h

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Datasheet 2.7V to 5.5V, 2A 1ch Synchronous Buck Converter integrated FET BD89630EFJ ●General Description ROHM’s high efficiency step-down switching

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·High Current Capabil

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www.DataSheet4U.com BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD895, BD897, BD899 and BD

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD896 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Complemen

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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type

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Datasheet 4.0V to 5.5V, 1.2A 1ch Synchronous Buck Converter with Integrated FET BD8964FVM General Description The BD8964FVM is ROHM’s high efficien

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isc Silicon PNP Darlington Power Transistor BD896 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hF

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