2SD896 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Good Linearity of hFE. High Current Capability. Wide Area of Safe Operati.

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Datasheet Specifications

Part number: 2SD896
Manufacturer: INCHANGE
File Size: 199.35 KB
Datasheet: 2SD896-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for 40W audio frequency output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Curren

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2SD896 NPN Transistor INCHANGE

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