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2SD896 NPN Transistor

2SD896 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Good Linearity of hFE. High Current Capability. Wide Area of Safe Operati.

2SD896 Applications

* Designed for 40W audio frequency output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Curren

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Datasheet Details

Part number
2SD896
Manufacturer
INCHANGE
File Size
199.35 KB
Datasheet
2SD896-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD896-like datasheet