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2SD811 NPN Transistor

2SD811 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD811 .
High Breakdown Voltage- : VCBO= 900V (Min). High Switching Speed. Low collector saturation voltage. Minimum Lot-to-Lot variations for.

2SD811 Applications

* Designed for use in converters, inverters, switching regulators, motor control systems etc ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Co

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Datasheet Details

Part number
2SD811
Manufacturer
INCHANGE
File Size
176.69 KB
Datasheet
2SD811-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD811-like datasheet