2SD817 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD817 .
High Breakdown Voltage- : VCBO= 1500V (Min). Low collector saturation voltage. Wide area of safe operation. With TO-3 Package. Mi.

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Datasheet Specifications

Part number: 2SD817
Manufacturer: INCHANGE
File Size: 175.56 KB
Datasheet: 2SD817-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Cont

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2SD817 NPN Transistor INCHANGE

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