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2SD897 Datasheet - Inchange Semiconductor

2SD897 Power Transistor

*High Breakdown Voltage- : VCBO= 1500V (Min) *High Switching Speed *Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 1A *Built-in Damper Diode *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in c.

2SD897_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD897

Manufacturer:

Inchange Semiconductor

File Size:

206.47 KB

Description:

Power transistor.

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2SD897 2SD897 Power Transistor Inchange Semiconductor

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