2SD873 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SD873 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min). High Power Dissipation. High Current Capability. Minimum Lot-to-Lot vari.

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Datasheet Specifications

Part number: 2SD873
Manufacturer: Inchange Semiconductor
File Size: 204.04 KB
Datasheet: 2SD873_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* High power amplifier applications.
* High power switching applications.
* DC-DC converter applications.
* Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitte

2SD873 Distributors

📁 Related Datasheet

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2SD873 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD873-like datasheet