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2SD873 Datasheet - Inchange Semiconductor

2SD873 Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) *High Power Dissipation *High Current Capability *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *High power amplifier applications. *High power switching applicatio.

2SD873_InchangeSemiconductor.pdf

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Part number:

2SD873

Manufacturer:

Inchange Semiconductor

File Size:

204.04 KB

Description:

Power transistor.

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