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2SD860 Datasheet - Inchange Semiconductor

2SD860 Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) *High Collector Power Dissipation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA.

2SD860_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD860

Manufacturer:

Inchange Semiconductor

File Size:

213.00 KB

Description:

Power transistor.

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2SD860 2SD860 Power Transistor Inchange Semiconductor

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