2SD861 Silicon NPN Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min). High Power Dissipation- : PC= 45W@ TC= 25℃. Minimum Lot-to-Lot variations for.

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Datasheet Specifications

Part number: 2SD861
Manufacturer: Inchange Semiconductor
File Size: 212.47 KB
Datasheet: 2SD861-InchangeSemiconductor.pdf
Description: Silicon NPN Transistor

Applications

* Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector

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2SD861 Silicon NPN Transistor Inchange Semiconductor

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