2SD861 Datasheet - Inchange Semiconductor

datasheet Preview Page 1 from Datasheet4u.com

2SD861 Silicon NPN Transistor

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min). High Power Dissipation- : PC= 45W@ TC= 25℃. Minimum Lot-to-Lot variations for.

2SD861-InchangeSemiconductor.pdf

2SD861 Datasheet Preview — Preview of 2SD861 PDF

Datasheet Details

Part number:

2SD861

Manufacturer:

Inchange Semiconductor

File Size:

212.47 KB

Description:

Silicon NPN Transistor

Applications

* Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector

2SD861 Distributors

📁 Related Datasheet

2SD862 2SD863 2SD866 2SD866A 2SD867 2SD868

📌 All Tags

2SD861 Silicon NPN Transistor Inchange Semiconductor

Inchange Semiconductor 2SD861-like datasheet