Datasheet Details
- Part number
- 2SD861
- Manufacturer
- Inchange Semiconductor
- File Size
- 212.47 KB
- Datasheet
- 2SD861-InchangeSemiconductor.pdf
- Description
- Silicon NPN Transistor
2SD861 Description
isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min).
High Power Dissipation-
: PC= 45W@ TC= 25℃.
Minimum Lot-to-Lot variations for.
2SD861 Applications
* Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector
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