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2SD861 Datasheet - Inchange Semiconductor

2SD861 Silicon NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) *High Power Dissipation- : PC= 45W@ TC= 25℃ *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATIN.

2SD861-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD861

Manufacturer:

Inchange Semiconductor

File Size:

212.47 KB

Description:

Silicon npn transistor.

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2SD861 2SD861 Silicon NPN Transistor Inchange Semiconductor

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