Datasheet Details
- Part number
- 2SD864
- Manufacturer
- Inchange Semiconductor
- File Size
- 211.15 KB
- Datasheet
- 2SD864_InchangeSemiconductor.pdf
- Description
- Power Transistor
2SD864 Description
isc Silicon NPN Darlington Power Transistor 2SD864 .
High DC Current Gain-
: hFE = 1000(Min)@ IC= 1.
Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min).
Low Collector-Emitter Sat.
2SD864 Applications
* Medium speed and power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
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