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2SD864

Power Transistor

2SD864 General Description


*High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A
*Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min)
*Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1.5A
*Complement to Type 2SB765
*Minimum Lot-to-Lot variations for robust device performance and .

2SD864 Datasheet (211.15 KB)

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Datasheet Details

Part number:

2SD864

Manufacturer:

Inchange Semiconductor

File Size:

211.15 KB

Description:

Power transistor.

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2SD864 Power Transistor Inchange Semiconductor

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