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2SD864 Datasheet - Inchange Semiconductor

2SD864 Power Transistor

*High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A *Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1.5A *Complement to Type 2SB765 *Minimum Lot-to-Lot variations for robust device performance and .

2SD864_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD864

Manufacturer:

Inchange Semiconductor

File Size:

211.15 KB

Description:

Power transistor.

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2SD864 2SD864 Power Transistor Inchange Semiconductor

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