2SD864 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor 2SD864 .
High DC Current Gain- : hFE = 1000(Min)@ IC= 1. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min). Low Collector-Emitter Sat.

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Datasheet Specifications

Part number: 2SD864
Manufacturer: Inchange Semiconductor
File Size: 211.15 KB
Datasheet: 2SD864_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Medium speed and power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak

2SD864 Distributors

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