Datasheet Details
- Part number
- 2SD862
- Manufacturer
- INCHANGE
- File Size
- 179.62 KB
- Datasheet
- 2SD862-INCHANGE.pdf
- Description
- NPN Transistor
2SD862 Description
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD862 .
High Collector Current-IC= 2A.
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 20V(Min).
Good Linearity of hFE.
Low Saturation Volta.
2SD862 Applications
* Designed for high frequency, Low Vce(sat) middle power
transistors in a plastic envelope, primarily for use in audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
20
V
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