2SD862 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD862 .
High Collector Current-IC= 2A. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min). Good Linearity of hFE. Low Saturation Volta.

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Datasheet Specifications

Part number: 2SD862
Manufacturer: INCHANGE
File Size: 179.62 KB
Datasheet: 2SD862-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high frequency, Low Vce(sat) middle power transistors in a plastic envelope, primarily for use in audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 20 V

2SD862 Distributors

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2SD862 NPN Transistor INCHANGE

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