2SD869 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Low Collector Saturation Voltage- : VCE(sat)= 5.

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Datasheet Specifications

Part number: 2SD869
Manufacturer: INCHANGE
File Size: 202.11 KB
Datasheet: 2SD869-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3.5 A IE Emitter Curre

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