2SD868 Datasheet - Toshiba

2SD868 NPN Transistor

2SD868 Features

* . High Voltage : VcBO=1500V . Low Saturation Voltage : VcE(sat)=5V(Typ . (IC=2A, Ib=0.6A) . High Speed : tf =1 .0>«s(Max. ) (ICP=2A, lBl(end)=0.6A)

* Built-in Damper Type . Glass Passivated Collector-Base Junction. Unit in mm 025OMAX 02 1.0 MAX, + ao9 s 1.0

* 0.03 TTT 30.2±0.

Datasheet Details

2SD868

106.35 KB

Npn transistor.

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