® WON-TOP ELECTRONICS Features Glass Passivat.
FDD2512 - 150V N-Channel PowerTrench MOSFET
FDD2512 August 2001 FDD2512 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve .EDD2516AKTA-E - 256M bits DDR SDRAM (16M words x16 bits DDR400)
( DataSheet : www.DataSheet4U.com ) DATA SHEET 256M bits DDR SDRAM EDD2516AKTA-E (16M words × 16 bits) Description The EDD2516AKTA is a 256M bits Do.DD251 - 25A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE
® WON-TOP ELECTRONICS Features Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Low Forward Voltage Drop.EDD2508AETA - (EDD2508AETA / EDD2516AETA) 256M bits DDR SDRAM
DATA SHEET 256M bits DDR SDRAM EDD2508AETA (32M words × 8 bits) EDD2516AETA (16M words × 16 bits) Specifications • Density: 256M bits • Organization .DD251S - 25A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE
® WON-TOP ELECTRONICS Features Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Low Forward Voltage Drop.EDD2516AKTA-5-E - 256M bits DDR SDRAM (16M words x16 bits DDR400)
( DataSheet : www.DataSheet4U.com ) DATA SHEET 256M bits DDR SDRAM EDD2516AKTA-5-E (16M words × 16 bits, DDR400) Description The EDD2516AKTA-5 is a .EDD2516AETA - (EDD2508AETA / EDD2516AETA) 256M bits DDR SDRAM
DATA SHEET 256M bits DDR SDRAM EDD2508AETA (32M words × 8 bits) EDD2516AETA (16M words × 16 bits) Specifications • Density: 256M bits • Organization .VDD251SCTA - CMOS Voltage Detector
AnaSem Analog Semiconductor IC VDD Series Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector with Delay circuit (IMPORTANT: Ple.