FDD2512 - 150V N-Channel PowerTrench MOSFET
FDD2512 Features
* 6.7 A, 150 V RDS(ON) = 420 mΩ @ VGS = 10 V RDS(ON) = 470 mΩ @ VGS = 6 V
* Low gate charge (8nC typical)
* Fast switching
* High performance trench technology for extremely low RDS(ON) . D G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol V