FDD2612 200V N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDD2612 August 2001 FDD2612 200V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number: FDD2612
Manufacturer: Fairchild Semiconductor
File Size: 110.96 KB
Datasheet: FDD2612_FairchildSemiconductor.pdf
Description: 200V N-Channel PowerTrench MOSFET

Features

* 4.9 A, 200 V. RDS(ON) = 720 mΩ @ VGS = 10 V
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability
* Fast switching speed

Applications

* DC/DC converter D D G G S TO-252 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 200 ± 20 (Note 1a) Units V V A W 4.9 1

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FDD2612 200V N-Channel PowerTrench MOSFET Fairchild Semiconductor

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