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FDD2612

200V N-Channel PowerTrench MOSFET

FDD2612 Features

* 4.9 A, 200 V. RDS(ON) = 720 mΩ @ VGS = 10 V

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability

* Fast switching speed

* Low gate charge (8nC typical) Applications

* DC/DC converter D D G G

FDD2612 Datasheet (110.96 KB)

Preview of FDD2612 PDF

Datasheet Details

Part number:

FDD2612

Manufacturer:

Fairchild Semiconductor

File Size:

110.96 KB

Description:

200v n-channel powertrench mosfet.

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TAGS

FDD2612 200V N-Channel PowerTrench MOSFET Fairchild Semiconductor

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