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FDD2670 200V N-Channel PowerTrench MOSFET

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Description

FDD2670 November 2001 FDD2670 200V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number
FDD2670
Manufacturer
Fairchild Semiconductor
File Size
95.40 KB
Datasheet
FDD2670_FairchildSemiconductor.pdf
Description
200V N-Channel PowerTrench MOSFET

Features

* 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V
* Low gate charge
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS I

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200V N-Channel PowerTrench MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDD2670-like datasheet