WTE POWER SEMICONDUCTORS DD300/S – DD306/S 30A .
Huajing Microelectronics
9
3DD3015A1 - Silicon NPN Transistor
NPN ○R 3DD3015A1 1 ： 3DD3015A1 NPN ，， ，、 BVCEO 。 ：TO-92， RoHS 。 IC Ptot （Ta=25℃） 2 ： TO-92 450 1 0.8 V A W ● ● ● ● ● 3 ： 、， 。 1 2.
Huajing Microelectronics
2
3DD3015A1-H - Silicon NPN bipolar transistor
NPN 3DD3015 A1-H ○R 3DD3015 A1-H NPN ， ， ， 、 。 ● ● ● ● ● ● ● ● VCEO IC Ptot （Ta=25℃） 450 1 0.8 V A W TO-92 -10.
Won-Top Electronics
2
DD301 - DISH DIODE
WTE POWER SEMICONDUCTORS DD300/S – DD306/S 30A 8.4mm/9.5mm DISH DIODE Features ! Glass Passivated Die Construction ! Low Leakage ! Low Cost ! High S.
Won-Top Electronics
2
DD301S - DISH DIODE
WTE POWER SEMICONDUCTORS DD300/S – DD306/S 30A 8.4mm/9.5mm DISH DIODE Features ! Glass Passivated Die Construction ! Low Leakage ! Low Cost ! High S.
Huajing Microelectronics
2
3DD3015A3 - Silicon NPN Transistor
NPN 3DD3015 A3 ○R 3DD3015 A3 NPN ， ， ， 、 。 ● ● ● ● ● ● ● ● VCEO IC Ptot （Tc=25℃） 450 1.2 25 V A W TO-251 -10℃～40.
Inchange
2
3DD301B - Silicon Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage- : VCE(.
Inchange
2
3DD301C - Silicon Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE.
Inchange
2
3DD301D - Silicon Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE.
Huajing Microelectronics
2
3DD3010A1 - Silicon NPN Transistor
NPN ○R 3DD3010A1 1 ： 3DD3010A1 NPN ，， ，、 。 ：TO-92 ， RoHS 。 VCEO IC Ptot （Ta=25℃） 2 ： TO-92 480 0.5 0.8 V A W ● ● ● ● ● 1 2 3 1. B.
AnaSem
1
VDD301MCTA - CMOS Voltage Detector
AnaSem Analog Semiconductor IC VDD Series Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector with Delay circuit (IMPORTANT: Ple.