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40V P-Channel MOSFETs PDD4903 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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MDD4N20Y N-channel MOSFET 200V MDD4N20Y N-Channel MOSFET 200V, 3.0A, 1.35Ω General Description The MDD4N20Y uses advanced Magnachip’s MOSFET Technol

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40V N-Channel MOSFETs PDD4906 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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NPN 3DD4513 A1D ○R 3DD4513 A1D NPN ， ， ， ， 、 。 ● ● ● ● ● ● ● ● VCEO IC Ptot （Ta=25℃） 450 1.3 0.8 V A W TO-92 -10

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40V P-Channel MOSFETs PDD4909 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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Snap-In Aluminum Electrolytic Capacitors PEH536 Series, +105ºC Overview Applications Typical applications for KEMET's PEH536 capacitor include switc

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40V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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IXDD414PI / 414YI / 414CI / 414SI 14 Amp Low-Side Ultrafast MOSFET Driver Features • Built using the advantages and compatibility TM of CMOS and IXYS

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD4204D IC VCEO PC(TO-126/126S) PC(TO-220) MAIN CHARACTERISTICS 3A 400V 30W 60W Package

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IXDD414PI / 414YI / 414CI / 414SI 14 Amp Low-Side Ultrafast MOSFET Driver Features • Built using the advantages and compatibility TM of CMOS and IXYS

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40V N-Channel MOSFETs PDD4904 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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IXDD404 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latc

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PRELIMINARY DATA SHEET IXDD404PI / 404SI / 404SIA / 404SI-16 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features • Built using the advantages and co

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PRELIMINARY DATA SHEET IXDD404PI / 404SI / 404SIA / 404SI-16 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features • Built using the advantages and co

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MDD4N25 N-channel MOSFET 250V MDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω General Description The MDD4N25 uses advanced Magnachip’s MOSFET Technology

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40V P-Channel MOSFETs PDD4943-1 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology

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40V N-Channel MOSFETs PDD4964 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI IXDN409PI / 409SI / 409YI / 409CI 9 Ampere Low-Side Ultrafast MOSFET Driver Featu

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40V N+P Dual Channel MOSFETs PDD4701 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMO

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD4243D(T/I/M/Z) MAIN CHARACTERISTICS IC 2.0A VCEO 400V PC(TO-92) 1W PC(TO-251) 10W

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