DF-A Datasheet | Specifications & PDF Download

NEW Board-to-Wire Swing-Lock Connector for Low-Profile Power Source DF61 Series Swing-Lock Structure Illustration ■Features 1. Reinforced Swing Loc

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Bluetooth Headset IC - WS9623AB3DF Datasheet Version: V1.2, Sep 2014 110/F 530 Tower, QingYuan Road, TaiHu International Technology Park, WuXi New Dis

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LM3033DFW-0B-1 LCD Module User Manual Prepared by: Cai Date: 2008-06-20 Checked by: Date: Rev. Descriptions 0.1 Preliminary New release Approved b

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LM3033DFW-0B LCD Module User Manual Shenzhen TOPWAY Technology Co., Ltd. Rev. Descriptions 0.1 Preliminary New release URL: www.topwaydisplay.com ww

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Discrete Single Port 10/100 Base-T PCMCIA AEDFP-G16 LANDatacom more than you expect Typical Common Electrical Characteristics1 Inductance 350uH Min

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Discrete Single Port 10/100 Base-T PCMCIA AEDFP-G16 LANDatacom more than you expect Typical Common Electrical Characteristics1 Inductance 350uH Min

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MDF9N50 N-channel MOSFET 500V MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description The MDF9N50 uses advanced Magnachip’s MOSFET Technolog

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P1003BDF N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.8mΩ @VGS = 10V ID 62A TO-252 ABSOLUTE MAXIMUM RAT

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High Performance CCFL Controller DF6109A —DF6109A （V1.0） z DF6109A ZVS （Zero Voltage Switch） LCD IC，，， 、、；， 、、LCD 、，、 。 z ‹ IC ：4.5V----18V ‹

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MDF11N65B N-channel MOSFET 650V MDF11N65B N-Channel MOSFET 650V, 12A, 0.65Ω General Description These N-channel MOSFET are produced using advanced M

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Features VDS (V) = -40V RDS(ON) 70m (VGS = 10V) ，ID = -4.4A RDS(ON) 95m (VGS = 4.5V) ，ID = -3.5A SI2319A SOT-23 Plastic-Encapsulate MOSFETS SOT–23 1

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Mechanical Data  Surface Mount Package  Sidewall tin Plating (SWP) for wettable flanks in AOI  Weight: 0.008 grams (approximately)  Case Material

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BP85226DF Ultra-high Integration Off-line Switcher IC Description Features The BP85226DF is a high performance, highly integrated ◼ Integrated VCC

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N-channel MOSFET Features  500V,20A  RDS(on)=0.21Ω @VGS=10V,ID=10A  High speed switching  High ruggedness  100% avalanche tested  Improved dv/dt

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MDF7N65B N-channel MOSFET 650V MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35Ω General Description These N-channel MOSFET are produced using advanced Ma

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MDP4N60/MDF4N60 N-channel MOSFET 600V MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description These N-channel MOSFET are produced usin

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MDF7N60B N-channel MOSFET 600V MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15Ω General Description These N-channel MOSFET are produced using advanced Ma

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isc Silicon NPN Power Transistor DESCRIPTION · High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (

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Through Hole Lamp Product Data Sheet LTL30EKDFGJ-004A Spec No.: DS20-2007-0124 Effective Date: 07/30/2009 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001

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www.vishay.com IHDF-1300AE-1A Vishay Custom Magnetics Low Profile, Through-Hole, High Current Inductors, Edge-Wound Series LINKS TO ADDITIONAL RESO

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