DF2 Datasheet | Specifications & PDF Download

N-channel MOSFET Features  500V,20A  RDS(on)=0.21Ω @VGS=10V,ID=10A  High speed switching  High ruggedness  100% avalanche tested  Improved dv/dt

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The product information in this catalog is for reference only. Please request the Engineering Drawing for the most current and accurate design informa

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3A Avg. 200 Volts FRED 31DF2 INSTANTANEOUS FORWARD CURRENT (A) 50 20 10 5 2 1 0.5 0.2 0 FORWARD CURRENT VS. VOLTAGE Tj=25°C Tj=150°C 0.4 0.8 1.2

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Core Logic ')  ® $0,+*  PLFURQ &026 *DWH $UUD\ Description DF211 is a static, master-slave, multiplexed scan D flip-flop. RESET is asynchrono

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MDP2N60/MDF2N60 N-channel MOSFET 600V MDP2N60/MDF2N60 N-Channel MOSFET 600V, 2.0A, 4.5Ω General Description These N-channel MOSFET are produced using

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STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package Datasheet - production data TAB TO-220 1 23 Figure 1:

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www.DataSheet4U.com BL FEATURES Low cos t GALAXY ELECTRICAL 30DF1 (Z)---30DF2 (Z) VOLT AGE RANGE: 100 --- 200 V CURRENT : 3.0 A FAST RECOVERY RECT

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Rectifier Diode DF25V60 デバイス　 Surface Mounting Device Single Diode ■　OUTLINE Package：STO-220 Unit : mm Weight : 1.5g（typ.） 600V 25A • SMD • にれ •

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DF20NA80/160 DF20NA80/160 SIP-Diode Module Three Phase Rectifier Bridge Advantages SIP Single In-line Package Very Low Forward Voltage Drop High Surg

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DIODE(THREE PHASES BRIDGE TYPE) DF20CA80/120/160 Power Diode Module DF20CA is designed for three phase full wave rectification, which has six diodes

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COPY & PASTE A CDE PART NUMBER TO CHECK STOCK ONLINE: GO Type 500C 95 °C Long-Life, Screw Terminal, Aluminum Electrolytic –40 °C to +95 °C, Long Lif

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www.vishay.com 500D Vishay Sprague Aluminum Capacitors +85 °C, Miniature, General Purpose FEATURES • Increased CV efficiency • New 0.709 [18.0 m

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MDF2N60B N-channel MOSFET 600V MDF2N60B N-Channel MOSFET 600V, 2.0A, 4.5Ω General Description These N-channel MOSFET are produced using advanced Mag

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ESD Protection Diodes Silicon Epitaxial Planar DF2B36FU DF2B36FU 1. Applications • ESD Protection Note: This product is designed for protection agai

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STGB30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a D2PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Int

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www.vishay.com 500D Vishay Sprague Aluminum Capacitors +85 °C, Miniature, General Purpose FEATURES • Increased CV efficiency • New 0.709 [18.0 m

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STGYA75H120DF2 Datasheet Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package TAB 1 23 TAB 1 2 3 Max247 lo

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www.DataSheet4U.com BL FEATURES Low cos t GALAXY ELECTRICAL 30DF1 (Z)---30DF2 (Z) VOLT AGE RANGE: 100 --- 200 V CURRENT : 3.0 A FAST RECOVERY RECT

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Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com

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ESD Protection Diodes Silicon Epitaxial Planar DF2S5M4SL DF2S5M4SL 1. Applications • ESD Protection Note: This product is designed for protection ag

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