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RJH60V1BDPP-M0 (Renesas)

IGBT

Preliminary Datasheet RJH60V1BDPP-M0 600V - 8A - IGBT Application: Inverter Features  Short circuit withstand time (6 s typ.)  Low collector to em
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RJK6026DPP-E0 (Renesas)

MOS FET

Preliminary Datasheet RJK6026DPP-E0 600V - 5A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 2.0  typ. (at ID = 2.5 A,
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