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RJK6026DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1592-0200 Rev.2.00 Jun 04, 2008 Features • Low on-resistance • Low leakage curr

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Preliminary Datasheet RJL6032DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 3.3  typ. (at

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Preliminary Datasheet RJK60S3DPP-E0 600V - 12A - SJ MOS FET High Speed Power Switching R07DS0637EJ0300 Rev.3.00 Oct 12, 2012 Features  Superjuncti

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www.DataSheet4U.com RJK5014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1530-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistan

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April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat

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RJK6034DPP-E0 600V - 1A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 9.8  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C)

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RJL5012DPP Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • H

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RJK5012DPP-A0 500V - 12A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)

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XDPP114x product family XDPTM XDPP114x product family Digital power supply controller for PWM and PFM applications Features • Digital controller ass

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www.DataSheet4U.com RJK5026DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1734-0100 Rev.1.00 Sep 11, 2008 Features • Low on-resistan

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RJK1008DPP N-Channel Power MOSFET High-Speed Switching Use REJ03G1708-0100 Rev.1.00 Jul 03, 2008 Features • VDSS : 100 V • RDS(on) : 11 mΩ (Max) • ID

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Preliminary Datasheet RJK1560DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features  Capable of 2.5 V gate drive  Low on-resistance R

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RJK2017DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1797-0200 Rev.2.00 Aug 26, 2009 Features • Low on-resistance • Low leakage curr

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Preliminary Datasheet RJK6013DPP-E0 600V - 11A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.58  typ. (at ID = 5.5 A

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Preliminary Datasheet RJK6035DPP-E0 600V - 6A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 1.1  typ. (at ID = 3 A, VG

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Preliminary Datasheet RJU60C2TDPP-EJ Single Diode Fast Recovery Diode Features • Fast reverse recovery time: trr = 70 ns typ. (at IF = 5 A, di/dt = 1

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Preliminary Datasheet RJK4006DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.69  typ. (ID = 4 A

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April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat

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April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat

(3 views)

April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat

(3 views)