DPP Datasheet | Specifications & PDF Download

April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat

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April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat

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Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features      Trench gate and thin wafer technology (G6H-I

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CAT5241 Quad Digitally Programmable Potentiometers (DPP™) with 64 Taps and 2-wire Interface FEATURES s Four linear-taper digitally programmable H GE

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Preliminary Datasheet RJK6035DPP-E0 600V - 6A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 1.1  typ. (at ID = 3 A, VG

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Advance Information CAT523 Configured Digitally Programmable Potentiometer (DPP): Programmable Voltage Applications FEATURES s Two 8-bit DPPS Configu

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Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate technology (G5H series) Low coll

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CAT524 Configured Digitally Programmable Potentiometer (DPP™): Programmable Voltage Applications FEATURES s Four 8-bit DPPs configured as programmable

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April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat

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Preliminary Datasheet RJK5026DPP-E0 500V - 6A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 1.35  typ. (at ID = 3 A, V

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Preliminary Datasheet RJK6026DPP-E0 600V - 5A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 2.0  typ. (at ID = 2.5 A,

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Free Datasheet http://www.datasheet4u.com/

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April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat

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www.DataSheet4U.com RJK6014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1531-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistan

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www.DataSheet4U.com RJK6009DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1607-0100 Rev.1.00 Dec 04, 2007 Features • Low on-resistan

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Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low colle

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Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features      Trench gate and thin wafer technology (G6H-I

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Preliminary Datasheet RJH60M3DPP-M0 600 V - 17 A - IGBT Application: Inverter Features  Short circuit withstand time (8 s typ.)  Low collector to

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RJL5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.56 Ω typ. (

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RJK2017DPP-M0 200V - 45A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.036  typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25

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