RJP30K3DPP-M0

N-Channel Power MOSFET

Renesas

RJP30K3DPP-M0 Features

* Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL R07DS0501EJ0100 Rev.1.00 Jul 05, 2011 O

RJP30K3DPP-M0 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJP30K3DPP-M0 Datasheet (154.76 KB)