RJP30K3DPP-M0 Datasheet - Renesas

RJP30K3DPP-M0 N-Channel Power MOSFET

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RJP30K3DPP-M0 Features

* Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL R07DS0501EJ0100 Rev.1.00 Jul 05, 2011 O

RJP30K3DPP-M0 Datasheet (154.76 KB)