RJP30H1 Datasheet, Igbt, Renesas

RJP30H1 Features

• Igbt
• Trench gate and thin wafer technology (G6H-II series)
• High speed switching: tr = 80 ns typ., tf = 150 ns typ.
• Low collector to emitter saturation voltage:

PDF File Details

Part number:

RJP30H1

Manufacturer:

Renesas ↗

File Size:

212.44kb

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📄 Datasheet

Description:

N-channel igbt.

TAGS

RJP30H1

Renesas

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