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RJP30H1, RJP30H1DPD - N-Channel IGBT

Renesas

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RJP30H1 Datasheet Preview — This datasheet PDF includes multiple part numbers: RJP30H1, RJP30H1DPD. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number: RJP30H1, RJP30H1DPD
Manufacturer: Renesas ↗
File Size: 212.44 KB
Datasheet: RJP30H1DPD_Renesas.pdf
Description: N-Channel IGBT
Note: This datasheet PDF includes multiple part numbers: RJP30H1, RJP30H1DPD.
Please refer to the document for exact specifications by model.

RJP30H1 Product details

Features

Trench gate and thin wafer technology (G6H-II series).
High speed switching: tr = 80 ns typ. , tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
Low leak current: ICES = 1 A max. Outline.

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Published: Dec 19, 2020 |