RJP30H1

N-Channel IGBT

Renesas

* Trench gate and thin wafer technology (G6H-II series)

* High speed switching: tr = 80 ns typ., tf = 150 ns typ.

* Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.

* Low leak current: ICES = 1 A max. Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-

RJP30H1

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N-channel igbt.

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RJP30H1 N-Channel IGBT Renesas

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